Title :
Device Model for Ballistic CNFETs Using the First Conducting Band
Author :
Hashempour, Hamidreza ; Lombardi, Fabrizio
Abstract :
This efficient approximation model for the drain-source current in a CNFET is analytic, its execution is fast, and it is suitable for simulating circuits consisting of many CNFET devices in a CAD environment. Evaluation results show that the model encounters a very modest normalized RMS error for diameter, Fermi level, and bias variations, while significantly improving simulation performance.
Keywords :
Fermi level; carbon nanotubes; field effect transistors; CAD environment; CNFET; Fermi level; bias variations; drain-source current; normalized RMS error; simulation performance; Atomic layer deposition; Carbon nanotubes; Circuit simulation; Curve fitting; Mathematical model; Nanoscale devices; Semiconductivity; Solid modeling; Switches; Voltage; CAD; CNFET; approximation; carbon nanotube; charge density; closed-form; drain-source current; self-consistent voltage;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2008.34
