• DocumentCode
    1123959
  • Title

    Device Model for Ballistic CNFETs Using the First Conducting Band

  • Author

    Hashempour, Hamidreza ; Lombardi, Fabrizio

  • Volume
    25
  • Issue
    2
  • fYear
    2008
  • Firstpage
    178
  • Lastpage
    186
  • Abstract
    This efficient approximation model for the drain-source current in a CNFET is analytic, its execution is fast, and it is suitable for simulating circuits consisting of many CNFET devices in a CAD environment. Evaluation results show that the model encounters a very modest normalized RMS error for diameter, Fermi level, and bias variations, while significantly improving simulation performance.
  • Keywords
    Fermi level; carbon nanotubes; field effect transistors; CAD environment; CNFET; Fermi level; bias variations; drain-source current; normalized RMS error; simulation performance; Atomic layer deposition; Carbon nanotubes; Circuit simulation; Curve fitting; Mathematical model; Nanoscale devices; Semiconductivity; Solid modeling; Switches; Voltage; CAD; CNFET; approximation; carbon nanotube; charge density; closed-form; drain-source current; self-consistent voltage;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2008.34
  • Filename
    4483820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1123959