DocumentCode :
1124088
Title :
Quantum efficiency of electron-beam pumped GaAs lasers
Author :
Lavine, J.
Author_Institution :
Raytheon Research Div., Waltham, MA, USA
Volume :
3
Issue :
11
fYear :
1967
fDate :
11/1/1967 12:00:00 AM
Firstpage :
641
Lastpage :
642
Abstract :
Measurements of differential external quantum efficiency as high as 66 percent have been observed at 77°K in an electron-beam pumped GaAs laser doped at 
/cm3with Sn. Peak-power output of the order of 20 watts has been obtained at both 4.2° and 77°K.
/cm3with Sn. Peak-power output of the order of 20 watts has been obtained at both 4.2° and 77°K.Keywords :
Doping; Fluorescence; Gallium arsenide; Laser beams; Laser excitation; Power generation; Pump lasers; Semiconductor lasers; Threshold current; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1967.1074396
Filename :
1074396
Link To Document :
