• DocumentCode
    1124231
  • Title

    Direct experimental verification of shot noise in short channel MOS transistors

  • Author

    Andersson, S. ; Svensson, C.

  • Author_Institution
    Dept. of Electr. Eng., Linkoping Univ., Sweden
  • Volume
    41
  • Issue
    15
  • fYear
    2005
  • fDate
    7/21/2005 12:00:00 AM
  • Firstpage
    869
  • Lastpage
    871
  • Abstract
    Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al.
  • Keywords
    MOSFET; semiconductor device models; semiconductor device noise; shot noise; 0.18 micron; diffusion currents; drain noise current; n-MOS transistors; short channel MOS transistors; shot noise; theoretical noise models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051474
  • Filename
    1487757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124231