Title :
Calculation of power diode reverse-recovery time for SPICE simulations
Author :
Strollo, Antonio Giuseppe Maria
Author_Institution :
Dept. of Electron. Eng., Naples Univ.
fDate :
7/7/1994 12:00:00 AM
Abstract :
A new model for the calculation of power diode reverse-recovery time is described. The model takes into account the effect of emitter recombination and is easily incorporated into the PSPICE simulator. Comparisons between the proposed model and numerical simulation results are presented
Keywords :
SPICE; digital simulation; electron-hole recombination; power electronics; semiconductor device models; semiconductor diodes; PSPICE simulator; SPICE simulations; emitter recombination; numerical simulation results; power diode; reverse-recovery time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940770
