DocumentCode
1124448
Title
Calculation of power diode reverse-recovery time for SPICE simulations
Author
Strollo, Antonio Giuseppe Maria
Author_Institution
Dept. of Electron. Eng., Naples Univ.
Volume
30
Issue
14
fYear
1994
fDate
7/7/1994 12:00:00 AM
Firstpage
1109
Lastpage
1110
Abstract
A new model for the calculation of power diode reverse-recovery time is described. The model takes into account the effect of emitter recombination and is easily incorporated into the PSPICE simulator. Comparisons between the proposed model and numerical simulation results are presented
Keywords
SPICE; digital simulation; electron-hole recombination; power electronics; semiconductor device models; semiconductor diodes; PSPICE simulator; SPICE simulations; emitter recombination; numerical simulation results; power diode; reverse-recovery time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940770
Filename
299331
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