DocumentCode :
1124529
Title :
Improved Flux Pinning Properties of Bi-Based Superconductors by Dilute RE-Doping
Author :
Takimoto, Kota ; Shimoyama, J. ; Kageshima, Y. ; Ogino, H. ; Horii, S. ; Kishio, K.
Author_Institution :
Dept. of Appl. Chem., Univ. of Tokyo, Tokyo, Japan
Volume :
19
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
3080
Lastpage :
3083
Abstract :
Flux pinning properties of lead doped Bi2212 single crystals and Bi2223 sintered bulks were improved by low level light rare earth (LRE) doping to the Sr-site. The dilute LRE doping effects were prominent below ~30 K for Bi(Pb)2212 single crystals and below ~60 K for Bi(Pb)2223 sintered bulks. These results suggest that effective point-defect-type pinning sites were successfully introduced by small amount of LRE-doping. The improvement of flux pinning properties by dilute LRE-doping was the most remarkable when the carrier doping state was nearly optimal and the LRE doping level was ~0.5% for Sr-site.
Keywords :
bismuth compounds; calcium compounds; carrier density; critical currents; doping; flux pinning; high-temperature superconductors; lead compounds; point defects; sintering; strontium compounds; (BiPb)2Sr2Ca2Cu3Oy; (BiPb)2Sr2CaCu2Oy; Bi2212 single crystal; Bi2223 sintered bulk crystal; carrier concentration; carrier doping state; critical current; dilute RE-doping; flux pinning property; high-Tc cuprate superconductors; optimal level; point-defect; superconductor material; Bi-based cuprates; critical current; impurity doping; single crystals;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2009.2018849
Filename :
5153266
Link To Document :
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