Improved Flux Pinning Properties of Bi-Based Superconductors by Dilute RE-Doping

Author

Takimoto, Kota ; Shimoyama, J. ; Kageshima, Y. ; Ogino, H. ; Horii, S. ; Kishio, K.

Author_Institution

Dept. of Appl. Chem., Univ. of Tokyo, Tokyo, Japan

Volume

19

Issue

3

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

3080

Lastpage

3083

Abstract

Flux pinning properties of lead doped Bi2212 single crystals and Bi2223 sintered bulks were improved by low level light rare earth (LRE) doping to the Sr-site. The dilute LRE doping effects were prominent below ~30 K for Bi(Pb)2212 single crystals and below ~60 K for Bi(Pb)2223 sintered bulks. These results suggest that effective point-defect-type pinning sites were successfully introduced by small amount of LRE-doping. The improvement of flux pinning properties by dilute LRE-doping was the most remarkable when the carrier doping state was nearly optimal and the LRE doping level was ~0.5% for Sr-site.

Keywords

bismuth compounds; calcium compounds; carrier density; critical currents; doping; flux pinning; high-temperature superconductors; lead compounds; point defects; sintering; strontium compounds; (BiPb)₂Sr₂Ca₂Cu₃O_y; (BiPb)₂Sr₂CaCu₂O_y; Bi2212 single crystal; Bi2223 sintered bulk crystal; carrier concentration; carrier doping state; critical current; dilute RE-doping; flux pinning property; high-Tc cuprate superconductors; optimal level; point-defect; superconductor material; Bi-based cuprates; critical current; impurity doping; single crystals;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2009.2018849

Filename

5153266