Title :
Improvement of Reversible Strain Limit for Critical Current of DI-BSCCO Due to Lamination Technique
Author :
Osamura, Kozo ; Machiya, S. ; Suzuki, H. ; Ochiai, S. ; Adachi, H. ; Ayai, N. ; Hayashi, K. ; Sato, K.
Author_Institution :
Res. Inst. for Appl. Sci., Kyoto, Japan
fDate :
6/1/2009 12:00:00 AM
Abstract :
The DI (dynamically innovative)-BSCCO-Bi2223 tapes achieved high critical current as well as high modulus of elasticity. Further the reversible strain limit and the corresponding stress for critical current have been remarkably increased by means of lamination technique. During the course of development, their optimized architecture has been designed based on the principle of the rule of mixture for maximizing the force free strain exerted on the superconducting component. The reversible strain/stress limit (A rev/R rev) was defined as a strain, at which the critical current recovers to the level of 99% I co. Selecting several kinds of laminating materials and changing condition of the fabrication, the excellent Cu alloy-3ply tape with I co of 311 A/cm was realized of which A rev and R rev reached 0.42% and 300 MPa, respectively. Further during the theoretical analysis, the increase of reversible strain limit were made clear to be attributed to the increase of thermally induced residual strain as well as the compensation effect of laminated layers against a local fracture mode.
Keywords :
bismuth compounds; brass; calcium compounds; composite superconductors; critical currents; elastic moduli; fracture; high-temperature superconductors; internal stresses; laminates; laminations; strontium compounds; superconducting tapes; BiSrCaCuO-CuZn; brass; critical current; dynamically innovative tapes; elasticity modulus; force free strain; lamination technique; local fracture mode; optimized architecture; reversible strain limit; reversible strain-stress limit; superconducting component; BSSCO-Bi2223; critical current; force free strain; modulus of elasticity; residual strain;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2009.2019020