DocumentCode
1124659
Title
Measurement of the static and dynamic linewidth enhancement factor in strained 1.55 μm InGaAsP lasers
Author
Summers, Huw D. ; White, Ian H.
Author_Institution
Sch. of Phys., Bath Univ.
Volume
30
Issue
14
fYear
1994
fDate
7/7/1994 12:00:00 AM
Firstpage
1140
Lastpage
1141
Abstract
The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4±0.5 for the unstrained lasers and 2.1±0.5 for the strained devices are found under DC conditions. The a-value for the strained lasers measured under dynamic conditions is 2.4±0.6
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; semiconductor lasers; semiconductor quantum wells; spectral line breadth; 1.55 mum; DC; Fabry-Perot laser; InGaAsP; InGaAsP lasers; a-value; compressively strained lasers; dynamic linewidth enhancement factor; laser measurement; semiconductor lasers; static linewidth enhancement factor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940761
Filename
299353
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