Title :
Stable singlemode operation of 0.98 μm GaInAs/GaInAsP/GaInP buried ridge stripe laser with AlGaInP current blocking layer
Author :
Hashimoto, Jun ; Katsuyama, Tomokazu ; Yoshida, Isao ; Murata, Masayuki ; Hayashi, H.
Author_Institution :
Optoelectronics R&D Lab., Sumimoto Electr. Ind. Ltd., Yokohama
fDate :
7/7/1994 12:00:00 AM
Abstract :
By using a AlGaInP current blocking layer lattice-matched to GaAs, a GaInAs/GaInAsP/GaInP strained single quantum well (SSQW) buried ridge stripe laser emitting at 0.98 μm wavelength region was fabricated and successful operation was achieved for the first time. Single-longitudinal-mode operation with single-lobed far-field patterns was obtained at up to an output power of 50 mW for the uncoated laser (4×1000 μm2) under continuous-wave (CW) operation at room temperature. In addition, CW operation beyond 50 mW output was obtained at up to 100°C for the same device
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; 0.98 micron; 25 to 100 degC; 50 mW; AlGaInP; AlGaInP current blocking layer; GaInAs-GaInAsP-GaInP; GaInAs/GaInAsP/GaInP buried ridge stripe laser; continuous-wave operation; output power; single-lobed far-field patterns; single-longitudinal-mode operation; singlemode operation; strained single quantum well; uncoated laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940785
