DocumentCode :
1124800
Title :
Electro-Absorption Modulator Integrated Lasers With Enhanced Signal Injection Efficiency
Author :
Lim, Cheng Guan
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba
Volume :
26
Issue :
6
fYear :
2008
fDate :
3/15/2008 12:00:00 AM
Firstpage :
685
Lastpage :
691
Abstract :
By incorporating a lumped-element impedance- matching network on the laser diode carrier/submount, the signal injection efficiency of electro-absorption modulator integrated lasers is significantly improved through the reduction of input return loss. Over a frequency range spanning from 5.8 to 10 GHz, an improvement of approximately 12% to 37% in signal injection efficiency is observed. To avoid increasing the component-count, a unique implementation of the lumped element impedance matching network is proposed.
Keywords :
integrated optoelectronics; microchip lasers; microwave photonics; optical communication equipment; electro-absorption modulator integrated laser; enhanced signal injection; frequency 5.8 GHz to 10 GHz; input return loss; laser diode; lumped element impedance matching network; lumped-element impedance-matching network; Bandwidth; Capacitance; Diode lasers; Frequency; Impedance matching; Optical devices; Optical distortion; Optical fiber communication; Optical losses; Ultrafast optics; Electro-absorption modulator integrated lasers; impedance matching; input return loss;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2007.915275
Filename :
4484112
Link To Document :
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