Design Optimization of a SiGe/Si Quantum-Well Optical Modulator

Author

Maine, Sylvain ; Morini, Delphine Marris ; Vivien, Laurent ; Cassan, Eric ; Laval, Suzanne

Author_Institution

Univ. Paris-Sud XI, Orsay

Volume

26

Issue

6

fYear

2008

fDate

3/15/2008 12:00:00 AM

Firstpage

678

Lastpage

684

Abstract

In this paper, design optimization of a SiGe/Si quantum-well optical modulator integrated on silicon-on-insulator (SOI) substrate to achieve high-frequency operation is reported. The structure, based on free-carrier depletion in a PIN diode, is integrated in a rib waveguide. Influence of geometrical parameters, layer doping, and metal contacts is determined through numerical simulations and optimized structures are defined. The obtained figure of merit V_piL_pi is 1.8 V-cm.

Keywords

Ge-Si alloys; elemental semiconductors; integrated optics; integrated optoelectronics; optical design techniques; optical modulation; optical waveguides; quantum well devices; rib waveguides; semiconductor materials; silicon; PIN diode; Si; SiGe-Si; design optimization; free-carrier depletion; high-frequency operation; layer doping; metal contacts; quantum-well optical modulator; rib waveguide; silicon-on-insulator substrate; Design optimization; Doping; Geometrical optics; Germanium silicon alloys; Integrated optics; Optical modulation; Optical waveguides; Quantum wells; Silicon germanium; Silicon on insulator technology; Optical modulation; silicon-on-insulator technology; waveguides;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2007.916589

Filename

4484113