Retention Performance of Ferroelectric Polymer Film for Nonvolatile Memory Devices

Author

Kim, Woo Young ; Ka, Du Youn ; Cho, Byeongok ; Kim, Sang Youl ; Lee, Yong Soo ; Lee, Hee Chul

Author_Institution

Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

30

Issue

8

fYear

2009

Firstpage

822

Lastpage

824

Abstract

For nonvolatile memory devices, capacitors with metal-ferroelectric-metal structures were fabricated using poly(vinylidene fluoride-trifluoroethylene) as a ferroelectric layer, and performance was estimated in terms of retention property. In the same thickness, the polarization retained longer as the writing pulsewidth (PW) was extended. With the same writing PW, a thicker capacitor maintained a polarized state longer. In conclusion, the performance for operating voltage, operating frequency, and data retention time is expected.

Keywords

MIM devices; capacitors; dielectric polarisation; dielectric thin films; ferroelectric capacitors; ferroelectric materials; polymer films; random-access storage; thin film capacitors; capacitors; data retention time; ferroelectric polymer film; metal-ferroelectric-metal structures; nonvolatile memory devices; operating frequency; operating voltage; polarization; poly(vinylidene fluoride-trifluoroethylene); writing pulsewidth; Depolarization; ferroelectric; hysteresis; low voltage; metal–ferroelectric–metal (MFM) structure; retention; writing pulsewidth (PW);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2022961

Filename

5153298