• DocumentCode
    1124957
  • Title

    Electroluminescence from InGaAs/InAlAs HEMTs

  • Author

    Woodhead, J. ; Reddy, Monika ; David, J.P.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ.
  • Volume
    30
  • Issue
    14
  • fYear
    1994
  • fDate
    7/7/1994 12:00:00 AM
  • Firstpage
    1181
  • Lastpage
    1183
  • Abstract
    Electroluminescence has been observed from InGaAs/lnAlAs HEMTs under low bias conditions confirming the presence of holes caused by impact ionisation. The field required for the onset of electroluminescence and the kink effect are similar, suggesting that the kink effect is associated with impact ionisation
  • Keywords
    III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; InGaAs-InAlAs; InGaAs/InAlAs HEMTs; electroluminescence; holes; impact ionisation; kink effect; low bias conditions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940775
  • Filename
    299380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124957