Title :
Phase-Change and Redox-Based Resistive Switching Memories
Author :
Wouters, Dirk J. ; Waser, Rainer ; Wuttig, Matthias
Author_Institution :
Inst. fυr Werkstoffe der Elektrotechnik II, RWTH Aachen Univ., Aachen, Germany
Abstract :
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed.
Keywords :
phase change memories; resistive RAM; 3-D memory; ReRAM; phase-change memories; redox-based resistive random access memory; redox-based resistive switching memories; Crystallization; Information processing; Memory management; Phase change materials; Programming; Random access memory; Switches; Electronic memories; phase-change memories (PCMs); resistive random access memory (ReRAM); resistive switching (RS) memories;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2015.2433311
