Title :
Stress-induced electromigration backflow effect in copper interconnects
Author :
Ney, David ; Federspiel, Xavier ; Girault, Valerie ; Thomas, Olivier ; Gergaud, Patrice
Author_Institution :
Central R&D Lab., Crolles
fDate :
6/1/2006 12:00:00 AM
Abstract :
The electromigration threshold in copper interconnect is reported in this paper. The critical product (jL)c is first determined for copper oxide interconnects with temperature ranging from 250degC to 350degC from package-level experiments. It is shown that the product does not significantly change in this temperature range. Then, (jL)c was extracted for copper low-k dielectric (k=2.8) interconnects at 350degC. A larger value than that for oxide dielectric was found. Finally, a correlation between the n values from Black´s model and with jL conditions was established for both dielectrics
Keywords :
copper; dielectric materials; electromigration; integrated circuit interconnections; integrated circuit reliability; stress effects; 250 to 350 C; Black model; Blech effect; Cu; copper interconnects; copper oxide interconnects; critical product; oxide dielectric; stress-induced electromigration backflow effect; Copper; Current density; Dielectrics; Electromigration; Failure analysis; Integrated circuit interconnections; Integrated circuit reliability; Manufacturing; Stress; Temperature distribution; Black´s model; Blech effect; copper; electromigration (EM); interconnect; lifetime extrapolation; threshold product;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.877862
