DocumentCode :
1125140
Title :
Contactless Measurements of Resistivity of Semiconductor Wafers Employing Single-Post and Split-Post Dielectric-Resonator Techniques
Author :
Krupka, Jerzy ; Mazierska, Janina
Author_Institution :
Instytut Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, Warsaw
Volume :
56
Issue :
5
fYear :
2007
Firstpage :
1839
Lastpage :
1844
Abstract :
Complementary single- and split-post dielectric- resonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10-5 to 105 Omega ldr cm. Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.
Keywords :
dielectric resonators; electric resistance measurement; electrical resistivity; permittivity; semiconductor device manufacture; semiconductor device testing; high-resistivity semiconductors; onwafer resistivity mapping; permittivity; resistivity contactless measurements; semiconductor wafers; single-post dielectric-resonator techniques; split-post dielectric-resonator techniques; Conductivity measurement; Dielectric losses; Dielectric materials; Dielectric measurements; Frequency measurement; Millimeter wave measurements; Permittivity measurement; Radio frequency; Silicon; Testing; Conductivity measurement; GaAs; SiC; contactless measurements; resistivity mapping; semiconductor-material measurements; silicon;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2007.903647
Filename :
4303420
Link To Document :
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