• DocumentCode
    1125140
  • Title

    Contactless Measurements of Resistivity of Semiconductor Wafers Employing Single-Post and Split-Post Dielectric-Resonator Techniques

  • Author

    Krupka, Jerzy ; Mazierska, Janina

  • Author_Institution
    Instytut Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, Warsaw
  • Volume
    56
  • Issue
    5
  • fYear
    2007
  • Firstpage
    1839
  • Lastpage
    1844
  • Abstract
    Complementary single- and split-post dielectric- resonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10-5 to 105 Omega ldr cm. Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.
  • Keywords
    dielectric resonators; electric resistance measurement; electrical resistivity; permittivity; semiconductor device manufacture; semiconductor device testing; high-resistivity semiconductors; onwafer resistivity mapping; permittivity; resistivity contactless measurements; semiconductor wafers; single-post dielectric-resonator techniques; split-post dielectric-resonator techniques; Conductivity measurement; Dielectric losses; Dielectric materials; Dielectric measurements; Frequency measurement; Millimeter wave measurements; Permittivity measurement; Radio frequency; Silicon; Testing; Conductivity measurement; GaAs; SiC; contactless measurements; resistivity mapping; semiconductor-material measurements; silicon;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2007.903647
  • Filename
    4303420