Application of conductive AFM on the electrical characterization of single-bit marginal failure

Author

Bailon, Michelle F. ; Salinas, Peter Floyd F ; Arboleda, Jan Paul S

Author_Institution

Failure Anal. Eng. Sect., Intel Technol. Philippines Inc., Cavite

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

186

Lastpage

189

Abstract

The challenge to determine the failure mechanism in submicrometer devices has been increasing with transitions in technological processes. Determining the failure mechanism and finding the associated physical defect have become extremely difficult, if not impossible, due to the increased complexity in architecture and the extremely large number of transistors in ICs. In this investigation, the efficiency and the success rate of using conductive atomic force microscope (cAFM) in the localization of defects in 90-nm devices are shown. How the method was utilized to obtain full electrical data on a single-bit failure using the I-V curve sweep mode and how cAFM can be a suitable alternative to the passive voltage contrast method and in-chamber pico-probing were also demonstrated

Keywords

atomic force microscopy; failure analysis; fault diagnosis; integrated circuit reliability; integrated circuit testing; 90 nm; conductive atomic force microscopy; defect localization; electrical characterization; failure analysis; failure mechanism; inchamber picoprobing; integrated circuit transistors; passive voltage contrast; physical defects; submicrometer devices; Atomic force microscopy; Circuit faults; Failure analysis; Fault diagnosis; History; Image resolution; Isolation technology; Scanning electron microscopy; Scanning probe microscopy; Voltage; Conductive atomic force microscopy (AFM); defect localization; failure analysis (FA);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.877864

Filename

1673709