• DocumentCode
    1125256
  • Title

    Integrated AlGaAs waveguide components for optical phase difference measurement and correction

  • Author

    Lau, Suzanne D. ; Donnelly, Joseph P. ; Wang, C.A. ; Rediker, Robert H.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • Volume
    30
  • Issue
    6
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    1417
  • Lastpage
    1426
  • Abstract
    A Y-junction interferometer phase measurement technique has been developed that is independent of the power or power ratio in the input arms. This technique was incorporated into a proof-of-concept AlGaAs guided-wave Mach-Zehnder interferometer to demonstrate the measurement and correction of a phase difference between the arms. In the first part of this paper, we describe the design, fabrication, and characterization of the individual AlGaAs dielectric-loaded rib waveguide components that were chosen to fabricate the proof-of-concept interferometer. These components include passive waveguides, bends and Y-junctions, and reverse-biased phase modulators. The composition of the waveguide layer was chosen so that these modulators would have low loss at the applied voltage required for maximum phase correction. The choice was based on electroabsorption measurements on test modulators as a function of the energy difference between the bandgap of the waveguide layer and the operating wavelength. The average propagation loss at 862 nm of the passive single-mode guides used was 1.1 dB/cm. The abrupt bend insertion loss was ~0.20 dB/bend for a 0.5° bend angle, and the Y-junction insertion loss was ~0.37 dB for 1.0° full angle. Two-mm-long p+ -n--n+ phase modulators typically had Vπ voltages of ~6.8 V. On a slightly modified structure, V π voltages as low as 2.65 V were measured. In the last part of the paper, the proof-of-concept interferometer and test setup are described and recent phase difference measurement and correction data with intentional power imbalances greater than 90% between the interferometer arms are presented. These results demonstrate conclusively that the phase difference measurement and correction performance of the Y-junction interferometer technique are independent of the power ratio in the interferometer input arms for power ratios >10:1
  • Keywords
    aluminium compounds; electroabsorption; gallium arsenide; integrated optics; light interferometers; light interferometry; optical losses; optical waveguide components; optical waveguides; 862 nm; AlGaAs; AlGaAs dielectric-loaded rib waveguide components; Y-junction insertion loss; Y-junction interferometer phase measurement technique; abrupt bend insertion loss; applied voltage; average propagation loss; bandgap; bend angle; composition; design; electroabsorption measurements; energy difference; fabrication; integrated AlGaAs waveguide components; operating wavelength; optical phase difference correction; optical phase difference measurement; passive single-mode guides; passive waveguides; proof-of-concept AlGaAs guided-wave Mach-Zehnder interferometer; reverse-biased phase modulators; waveguide layer; Arm; Integrated optics; Optical devices; Optical interferometry; Optical waveguide components; Optical waveguides; Phase measurement; Phase modulation; Voltage; Waveguide components;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.299464
  • Filename
    299464