Title :
Thermal runaway in integrated circuits
Author :
Vassighi, Arman ; Sachdev, Manoj
Author_Institution :
Intel Corp., Hillsboro, OR
fDate :
6/1/2006 12:00:00 AM
Abstract :
In deep submicrometer technologies, increased standby leakage current in high-performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under the burn-in environment leading to still higher junction temperature and possibly the thermal runaway. In this paper, for the first time the concept of thermal runaway and the conditions that lead to thermal runaway is described. Also, the thermal management of high-performance microprocessors to avoid thermal runaway is investigated
Keywords :
integrated circuit packaging; integrated circuit reliability; leakage currents; microprocessor chips; thermal management (packaging); deep submicrometer technologies; high-performance microprocessors; integrated circuits; junction temperature; standby leakage current; thermal management; thermal runaway; Circuit testing; Cooling; Failure analysis; Leakage current; Microprocessors; Temperature measurement; Thermal degradation; Thermal management; Thermal stresses; Voltage; Integrated circuits (ICs); microprocessor; thermal runaway;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.876577
