• DocumentCode
    1125400
  • Title

    A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure

  • Author

    Kim, Yoon ; Park, Il Han ; Cho, Seongjae ; Yun, Jang-Gn ; Lee, Jung Hoon ; Kim, Doo-Hyun ; Lee, Gil Sung ; Park, Se-Hwan ; Lee, Dong Hua ; Sim, Won Bo ; Kim, Wandong ; Shin, Hyungcheol ; Lee, Jong-Duk ; Park, Byung-Gook

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    9
  • Issue
    1
  • fYear
    2010
  • Firstpage
    70
  • Lastpage
    77
  • Abstract
    In order to overcome the limitation of a multibit silicon-oxide-nitride-oxide-silicon (SONOS) memory with multistorage nodes, we propose a unique 3-D vertical NOR (U3VNOR) array architecture. The U3VNOR has a vertical channel so that it is possible to have a long enough channel without extra cell area. Therefore, we can avoid the problems such as redistribution of injected charges, second-bit effect, and short-channel effect. Also, it is the most integrated flash architecture having the smallest unit cell size, which is 1 F2/bit. In this paper, we present the fabrication method and the operation voltage scheme of the U3VNOR. In addition, through numerical simulation, we verify its program and erase characteristics. Due to its high density and reliable multibit operation, the U3VNOR is a promising structure for the future high-density NOR flash memory.
  • Keywords
    NOR circuits; flash memories; numerical analysis; 3-D vertical NOR array structure; SONOS flash memory; erase characteristics; high-density NOR flash memory applications; injected charge redistribution; integrated flash architecture; multibit operation; multibit silicon-oxide-nitride-oxide-silicon memory; multistorage nodes; numerical simulation; program verification; second-bit effect; short-channel effect; storage capacity 4 bit; 3-D array; flash memory; silicon–oxide–nitride–oxide–silicon (SONOS); vertical channel;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2009.2026173
  • Filename
    5153353