DocumentCode
112585
Title
Towards Power Optimization and Implementation of Probabilistic Circuits Using Single-Electron Technology
Author
Ran Xiao ; Chunhong Chen
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Volume
14
Issue
3
fYear
2015
fDate
May-15
Firstpage
513
Lastpage
523
Abstract
With continuous CMOS technology scaling toward its physical limits, there has been a growing demand for next-generation technologies with nanometer scale and novel design architectures. Single-electron (SE) technology is one of those candidates that can lead to high density and low power consumption for large-scale integration, at a cost of reduced reliability. Considering the fact that probabilistic circuits are able to realize fault-tolerant architectures, implementing probabilistic circuits with SE technology would be a natural solution for future electronic applications. In this paper, we first study the probabilistic behavior and implementation of SE logic, and show an exponential relation between logic gate´s reliability and its energy consumption. A gate-level power optimization for probabilistic circuits is then proposed to minimize their power cost under given reliability constraints. Comparison with simulated annealing (SA) based method shows that the proposed approach can obtain promising results within a reasonably short time.
Keywords
CMOS integrated circuits; fault tolerance; probability; simulated annealing; single electron devices; continuous CMOS technology; energy consumption; fault tolerant architectures; gate level power optimization; large scale integration; probabilistic circuits; reliability; simulated annealing; single electron technology; Integrated circuit reliability; Inverters; Logic gates; Noise; Optimization; Probabilistic logic; Low power; Probabilistic circuits; low power; power- -reliability tradeoff; power-reliability tradeoff; probabilistic circuits; single-electron technology;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2015.2414352
Filename
7066899
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