• DocumentCode
    112585
  • Title

    Towards Power Optimization and Implementation of Probabilistic Circuits Using Single-Electron Technology

  • Author

    Ran Xiao ; Chunhong Chen

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
  • Volume
    14
  • Issue
    3
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    513
  • Lastpage
    523
  • Abstract
    With continuous CMOS technology scaling toward its physical limits, there has been a growing demand for next-generation technologies with nanometer scale and novel design architectures. Single-electron (SE) technology is one of those candidates that can lead to high density and low power consumption for large-scale integration, at a cost of reduced reliability. Considering the fact that probabilistic circuits are able to realize fault-tolerant architectures, implementing probabilistic circuits with SE technology would be a natural solution for future electronic applications. In this paper, we first study the probabilistic behavior and implementation of SE logic, and show an exponential relation between logic gate´s reliability and its energy consumption. A gate-level power optimization for probabilistic circuits is then proposed to minimize their power cost under given reliability constraints. Comparison with simulated annealing (SA) based method shows that the proposed approach can obtain promising results within a reasonably short time.
  • Keywords
    CMOS integrated circuits; fault tolerance; probability; simulated annealing; single electron devices; continuous CMOS technology; energy consumption; fault tolerant architectures; gate level power optimization; large scale integration; probabilistic circuits; reliability; simulated annealing; single electron technology; Integrated circuit reliability; Inverters; Logic gates; Noise; Optimization; Probabilistic logic; Low power; Probabilistic circuits; low power; power- -reliability tradeoff; power-reliability tradeoff; probabilistic circuits; single-electron technology;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2015.2414352
  • Filename
    7066899