• DocumentCode
    1125963
  • Title

    Threshold current density in solution-grown GaAs laser diodes

  • Author

    Susaki, W. ; Oku, Takanori ; Sogo, T.

  • Author_Institution
    Mitsubishi Electric Corporation, Hyogo, Japan
  • Volume
    3
  • Issue
    7
  • fYear
    1967
  • fDate
    7/1/1967 12:00:00 AM
  • Firstpage
    332
  • Lastpage
    333
  • Abstract
    Threshold current density of solution-grown GaAs laser diodes with a Fabry-Perot cavity were measured at 77 and 300°K by varying the acceptor concentration in the p region Na. Threshold current density was lower in the series of diodes with larger values of Nathan in the series of diodes with smaller values of Nafor the diode length between 0.1 and 1 mm. Through these experiments diodes with the threshold current density as low as 3 \\times10^{2} A/cm2at 77°K and 2.8 \\times 10^{4} A/cm2at 300°K for the diode length of 1 mm, and as low as 103A/cm2at 77°K and 4.5 \\times 10^{4} A/cm2at 300°K for the diode length of 0.1 mm were obtained.
  • Keywords
    Absorption; Current density; Diode lasers; Fabry-Perot; Gallium arsenide; Impurities; Length measurement; P-n junctions; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1967.1074588
  • Filename
    1074588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1125963