DocumentCode :
1125963
Title :
Threshold current density in solution-grown GaAs laser diodes
Author :
Susaki, W. ; Oku, Takanori ; Sogo, T.
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
3
Issue :
7
fYear :
1967
fDate :
7/1/1967 12:00:00 AM
Firstpage :
332
Lastpage :
333
Abstract :
Threshold current density of solution-grown GaAs laser diodes with a Fabry-Perot cavity were measured at 77 and 300°K by varying the acceptor concentration in the 
region Na . Threshold current density was lower in the series of diodes with larger values of Na than in the series of diodes with smaller values of Na for the diode length between 0.1 and 1 mm. Through these experiments diodes with the threshold current density as low as 
A/cm2at 77°K and 
A/cm2at 300°K for the diode length of 1 mm, and as low as 103A/cm2at 77°K and 
A/cm2at 300°K for the diode length of 0.1 mm were obtained.
region N A/cm2at 77°K and A/cm2at 300°K for the diode length of 1 mm, and as low as 103A/cm2at 77°K and A/cm2at 300°K for the diode length of 0.1 mm were obtained.Keywords :
Absorption; Current density; Diode lasers; Fabry-Perot; Gallium arsenide; Impurities; Length measurement; P-n junctions; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1967.1074588
Filename :
1074588
Link To Document :
