Title :
A High-Speed LED Driver That Sweeps Out the Remaining Carriers for Visible Light Communications
Author :
Kishi, T. ; Tanaka, Hiroya ; Umeda, Yohtaro ; Takyu, Osamu
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ. of Sci., Noda, Japan
Abstract :
The modulation speed of light-emitting diodes (LEDs) must be increased to improve the speed, increase the bandwidth, and miniaturize the hardware of visible light communication (VLC) systems. The LED modulation speed is limited by the remaining carriers that remain in the depletion capacitance. In this paper, we evaluate the increase in optical transmission rate for an LED driver for the first time by sweeping out the remaining carriers in a GaN-based LED for VLC system. The driver is fabricated using discrete GaAs FETs and passive elements on a board. An optical transmission experiment is performed. The experimental results demonstrate that the driver increases the maximum error-free bit rate for a NRZ PRBS signal from 69 to 95 Mb/s (38% increase). However, the additional current path for carrier sweep-out increases the power dissipation of the driver. To reduce the power dissipation, we employ a CMOS inverter, in which a PMOS FET sweeps out the carriers. The driver is fabricated using a 0.18-μm CMOS IC process and then implemented in a package. The experimental results demonstrate that this design increased the maximum error-free bit rate from 27.5 to 51.8 Mb/s (88% increase). The maximum bit rate for the packaged driver is 20% higher than that of the driver measured on the wafer.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; driver circuits; error statistics; gallium arsenide; gallium compounds; integrated optoelectronics; invertors; light emitting diodes; optical communication equipment; optical design techniques; optical fabrication; optical modulation; wafer level packaging; wide band gap semiconductors; CMOS IC process; CMOS inverter; GaAs; GaN; LED modulation speed; NRZ PRBS signal; PMOS FET; VLC systems; bit rate 27.5 Mbit/s to 51.8 Mbit/s; bit rate 69 Mbit/s to 95 Mbit/s; current path; depletion capacitance; discrete GaAs FET; error-free bit rate; hardware miniaturization; high-speed LED driver; light-emitting diodes; optical transmission rate; packaging; passive elements; power dissipation; size 0.18 mum; visible light communications; CMOS integrated circuits; Field effect transistors; Gallium arsenide; Light emitting diodes; Modulation; Optical receivers; Voltage measurement; CMOS; Carrier sweep-out; GaAs FET; LED; driver; visible light communication;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2013.2292896