DocumentCode :
1126183
Title :
Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout
Author :
Finkelstein, H. ; Gross, M. ; Yu-Hwa Lo ; Esener, S.
Author_Institution :
California-San Diego Univ., San Diego
Volume :
13
Issue :
4
fYear :
2007
Firstpage :
959
Lastpage :
966
Abstract :
We propose and analyze a new method for single-photon wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.
Keywords :
CMOS integrated circuits; avalanche photodiodes; hot carriers; luminescence; passivation; photodetectors; silicon compounds; complementary metal oxide semiconductor silicon SPAD; hot carrier luminescence; infrared single photon upconversion; optical coupling; primary IR photon; primary infrared single photon avalanche diode; silicon dioxide passivation layer; single photon wavelength up-conversion; Data processing; Hot carriers; Lattices; Luminescence; Optical coupling; Passivation; Radiative recombination; Semiconductor diodes; Silicon compounds; Spontaneous emission; Avalanche photodiodes; single photon detectors; wavelength upconversion;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2007.901884
Filename :
4305215
Link To Document :
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