Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation

Author

Hanxing Wang ; Cheng Liu ; Qimeng Jiang ; Zhikai Tang ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

760

Lastpage

762

Abstract

High-frequency and high-temperature dynamic performance of plasma-enhanced atomic layer deposition AlN-passivated enhancement-mode GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) has been investigated under hard switching conditions. Low dynamic ON-resistance (R_ON) degradation with small frequency dispersion and weak temperature dependence is obtained. The effectiveness of AlN passivation in suppressing current collapse is proved even under hard switching operations, which, according to other reports of SiNx-passivated devices, could worsen the dynamic R_ON degradation due to the trapping of additional hot electrons.

Keywords

III-V semiconductors; MIS devices; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; passivation; plasma deposition; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlN; MIS-high electron mobility transistors; SiN_x; aluminium nitride passivation; current collapse; frequency dispersion; hard switching operation; high-temperature dynamic performance; low dynamic ON-resistance degradation; metal-insulator-semiconductor HEMT; plasma-enhanced atomic layer deposition; weak temperature dependence; Aluminum gallium nitride; Aluminum nitride; Gallium nitride; III-V semiconductor materials; Passivation; Switches; Temperature measurement; AlN passivation; current collapse; dynamic ON-resistance; hard switching; hot electron;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2450695

Filename

7138571