DocumentCode :
1126432
Title :
Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition
Author :
Isshiki, K. ; Kaneno, N. ; Kumabe, H. ; Namizaki, Hirofumi ; Ikeda, Kenji ; Susaki, Wataru
Author_Institution :
Mitubishi Electric Corporation, Hyogo, Japan
Volume :
4
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
1475
Lastpage :
1481
Abstract :
For over 10 000 h, crank transverse-junction-stripe (TJS) laser diodes, grown by metal-organic chemical vapor deposition (MOCVD) maintain low and quite stable operating currents in the automatic-power-control aging with output power of 5 mW/facet at 55°C and 70°C. These MO-CVD lasers have excellent initial characteristics and small distributions of the characteristics. The reason for this excellent result is discussed in relation to the crystalline quality and the uniform growth of MO-CVD wafers.
Keywords :
Epitaxial growth; Gallium materials/lasers; Aging; Chemical lasers; Chemical vapor deposition; Diode lasers; Epitaxial growth; Gallium arsenide; Power generation; Substrates; Surface morphology; Temperature;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1986.1074638
Filename :
1074638
Link To Document :
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