DocumentCode
1126483
Title
High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor deposition
Author
Krakowski, Michel ; Blondeau, Robert ; Kazmierski, K. ; Razeghi, Manijeh ; Ricciardi, J. ; Hirtz, P. ; De Cremoux, Baudouin
Author_Institution
Thomson-CSF, Domaine de Corbeville, Orsay, France
Volume
4
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1470
Lastpage
1474
Abstract
We report the fabrication of very low threshold buried heterostructure lasers by a two-step MOCVD technique. We show very high yield of fabrication, very high uniformity of the initial characteristics, good reproducibility, and low degradation rate during the aging test.
Keywords
Gallium materials/lasers; Infrared lasers; Semiconductor growth; Yield optimization; Aging; Chemical lasers; Chemical vapor deposition; Diode lasers; MOCVD; Manufacturing; Optical device fabrication; Organic chemicals; Reproducibility of results; Thermal degradation;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1986.1074644
Filename
1074644
Link To Document