The effect of fluorine in silicon dioxide gate dielectrics

Author

Wright, Peter J. ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

36

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

879

Lastpage

889

Abstract

The effect of post-oxide-growth fluorine incorporation in gate dielectrics is reported. Fluorine was introduced through ion implantation into polysilicon and diffused into the gate oxide, as indicated by SIMS measurements. No great decrease in the breakdown field was observed, although a decrease in charge-to-breakdown was seen. Interface characteristics also improved with medium to high doses of fluoride. High doses were found to grow additional oxide. NMOS FETs showed increased immunity to hot-electron-induced stress. These results are explained by a model wherein fluorine bonds to silicon, and the displaced oxygen grows the additional oxide

Keywords

dielectric thin films; diffusion in solids; doping profiles; electric breakdown of solids; fluorine; insulated gate field effect transistors; secondary ion mass spectra; silicon compounds; NMOS FETs; SIMS; SiO₂:F gate dielectrics; additional oxide; breakdown field; charge-to-breakdown; diffusion; hot-electron-induced stress; interface characteristics; ion implantation; polysilicon; Annealing; Degradation; Dielectric breakdown; Dielectric measurements; Electric breakdown; MOS capacitors; Silicides; Silicon compounds; Stress; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.299669

Filename

299669