Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure

Author

Ogura, M. ; Mukai, Sonoyo ; Shimada, M. ; Asaka, T. ; Yamasaki, Y. ; Seki, Takaya ; WANO, H.

Author_Institution

Electrotech. Lab., Tsukuba, Japan

Volume

26

Issue

1

fYear

1990

Firstpage

18

Lastpage

19

Abstract

A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition (MOCVD), reactive ion beam etching (RIBE) and liquid phase epitaxial (LPE) regrowth techniques. An Al_0.1Ga_0.9As/Al_0.7Ga_0.3As multilayer is employed for the lower reflector. The active region is embedded with Al_0.4Ga_0.6As current blocking layers. The threshold current is 28 mA, and the spectral width is 2.5 AA. A 2*2 array is also demonstrated.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor junctions; sputter etching; 2*2 array; 28 mA; Al_0.1Ga_0.9As-Al_0.7Ga_0.3As multilayer; BH; DBR; LPE; MOCVD; RIBE; SELD; buried heterostructure; current blocking layers; distributed Bragg reflector; metalorganic chemical vapour deposition; reactive ion beam etching; spectral width; surface-emitting laser diode; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900012

Filename

44849