Title :
A design model for surface-termination optimization of off-state semiconductor devices
Author :
Waddell, James B. ; Middleton, John ; Board, Kenneth
Author_Institution :
Dept. of Civil Eng., Univ. Coll. of Swansea, UK
fDate :
5/1/1989 12:00:00 AM
Abstract :
An optimization design model for surface termination of off-state semiconductor devices under reverse-bias conditions is presented. The multivariable design model is used to optimize the surface profile shapes for nonplanar devices and the doping profiles of material regions along the surface for planar devices. The effectiveness of the design model in reducing the peak surface electric field to below 50% of the bulk value is demonstrated for two examples of each type of device
Keywords :
doping profiles; optimisation; semiconductor device models; surface phenomena; doping profiles; multivariable design model; nonplanar devices; off-state semiconductor devices; peak surface electric field; reverse-bias conditions; surface profile shapes; surface-termination optimization; Councils; Design optimization; Doping profiles; Electric breakdown; Mathematical model; P-n junctions; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Shape;
Journal_Title :
Electron Devices, IEEE Transactions on
