DocumentCode
1126573
Title
A design model for surface-termination optimization of off-state semiconductor devices
Author
Waddell, James B. ; Middleton, John ; Board, Kenneth
Author_Institution
Dept. of Civil Eng., Univ. Coll. of Swansea, UK
Volume
36
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
943
Lastpage
953
Abstract
An optimization design model for surface termination of off-state semiconductor devices under reverse-bias conditions is presented. The multivariable design model is used to optimize the surface profile shapes for nonplanar devices and the doping profiles of material regions along the surface for planar devices. The effectiveness of the design model in reducing the peak surface electric field to below 50% of the bulk value is demonstrated for two examples of each type of device
Keywords
doping profiles; optimisation; semiconductor device models; surface phenomena; doping profiles; multivariable design model; nonplanar devices; off-state semiconductor devices; peak surface electric field; reverse-bias conditions; surface profile shapes; surface-termination optimization; Councils; Design optimization; Doping profiles; Electric breakdown; Mathematical model; P-n junctions; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Shape;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.299677
Filename
299677
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