Title :
Thermal index changes by optical absorption in group III-V semiconductor waveguides
Author :
Gabriel, M.C. ; Haus, H.A. ; Ippen, Erich
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ, USA
fDate :
10/1/1986 12:00:00 AM
Abstract :
Large fast-relaxing intensity-dependent refractive index changes would make certain all-optical signal processing devices in waveguides feasible. In III-V compound materials, light-induced index changes can arise from any of several physical mechanisms which have different strengths and relaxation times. Index changes from 1.06-μm pulsed and CW Nd: YAG laser excitation were measured in single-mode low-loss InP and GaAs waveguide Fabry-Perot structures. The dominant effect was found to be due to heating of the waveguide volume which accompanies an extremely small amount of free-carrier absorption.
Keywords :
Optical refraction; Semiconductor waveguides; Absorption; III-V semiconductor materials; Optical refraction; Optical signal processing; Optical variables control; Optical waveguides; Pulse measurements; Refractive index; Semiconductor waveguides; Waveguide transitions;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1986.1074658
