Title :
Bulk and surface 1/f noise
Author :
Vandamme, Lode K J
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
5/1/1989 12:00:00 AM
Abstract :
The 1/f noise of an n-type silicon MOSFET has been studied under conditions ranging from accumulation to depletion at 300 K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge´s empirical 1/f noise parameter α with values between 10-7 and 10-5. The α value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction
Keywords :
electron device noise; insulated gate field effect transistors; random noise; surface conductivity; 300 K; Hooge noise parameter; Si; accumulation; bulk 1/f noise; depletion; n-type MOSFET; surface 1/f noise; surface conduction; Annealing; Charge carriers; Fluctuations; History; Passivation; Resistors; Semiconductor device noise; Silicon; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
