Title :
A high-voltage light-activated thyristor with a novel over-voltage self-protection structure
Author :
Shimizu, Yoshiteru ; Iyotani, Ryuji ; Konishi, Nobutake ; Yatsuo, Tsutomu
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fDate :
5/1/1989 12:00:00 AM
Abstract :
A high-voltage self-protected thyristor with a well structure formed in its p-base layer whose operation is based on avalanche breakdown is described. The device structure is simple and easy to fabricate compared to other avalanche-type devices. Numerical analyses and experiments demonstrate that the breakover voltage can be controlled by varying the well diameter and/or its depth. The breakdown voltage fluctuation of the device is 10% when the junction temperature is varied from 23 to 100°C. The device is turned on safely at 7300 V
Keywords :
impact ionisation; overvoltage protection; thyristors; 23 to 100 degC; avalanche breakdown; breakdown voltage fluctuation; breakover voltage; high-voltage light-activated thyristor; junction temperature; numerical analysis; overvoltage self-protection structure; p-base layer; well structure; Avalanche breakdown; Circuits; Fluctuations; HVDC transmission; Numerical analysis; Power electronics; Power system protection; Temperature; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
