DocumentCode :
1126969
Title :
Directed killing of anthrax spores by microwave-induced cavitation
Author :
Kiel, Johnathan L. ; Sutter, Richard E. ; Mason, Patrick A. ; Parker, Jill E. ; Morales, Pedro J. ; Stribling, Lucille J V ; Alls, John L. ; Holwitt, Eric A. ; Seaman, Ronald L. ; Mathur, Satnam P.
Author_Institution :
Air Force Res. Lab., Brooks, TX, USA
Volume :
30
Issue :
4
fYear :
2002
fDate :
8/1/2002 12:00:00 AM
Firstpage :
1482
Lastpage :
1488
Abstract :
High-power pulsed-microwave radiation damages anthrax spores by apparent sonoluminescence in aqueous solutions containing the organic semiconductor diazoluminomelanin (DALM). DALM biosynthesized by JM109 E. coli, containing the plasmid pIC2ORNR1.1, had a higher affinity for spores of Sterne strain anthrax when compared to several other species of bacilli and enhanced the effect. Upon exposure to pulsed-microwave radiation, anthrax spores showed a maximum of 4 to 5 (i.e., 4.6) logs of kill. The light emitted was typical of plasma gas emissions and the spores, upon scanning electron-microscopic examination, showed enlargement and rupture typical of rapid expansion. Therefore, microwave-induced cavitations localized to the spore surfaces enhanced kill.
Keywords :
biological effects of microwaves; biological techniques; cavitation; cellular biophysics; microorganisms; organic semiconductors; sonoluminescence; JM109 E. coli; Sterne strain anthrax; anthrax spores; aqueous solutions; bacilli; diazoluminomelanin; directed killing; enlargement; expansion; high-power pulsed-microwave radiation; light emission; localized microwave-induced cavitations; microwave-induced cavitation; microwaves; organic semiconductor; pIC2ORNR1.1 plasmid; plasma gas emissions; pulsed-microwave radiation exposure; rupture; scanning electron microscopy; scanning electron-microscopic examination; sonoluminescence; spore surfaces; spores; Biological materials; Biomedical materials; Capacitive sensors; Chemical technology; Fungi; Magnetic field induced strain; Microwave filters; Organic semiconductors; Plasmas; Reactive power;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2002.804207
Filename :
1167643
Link To Document :
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