GaAs MESFET active resonant circuit for microwave filter applications

Author

Haigh, D.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

42

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1419

Lastpage

1423

Abstract

Inverting and noninverting active integrator circuits are compensated for the effect of finite output conductance of the GaAs MESFET by the addition of capacitors and then used to realize an active tuned circuit resonating at 1.5 GHz with fully controllable Q-factor. The active tuned circuit is promising for implementing high-order IF filters at low-microwave frequencies

Keywords

III-V semiconductors; MMIC; Q-factor; Schottky gate field effect transistors; active filters; circuit resonance; error compensation; field effect integrated circuits; gallium arsenide; integrating circuits; microwave filters; radiofrequency filters; tuning; 1.5 GHz; GaAs; MESFET active resonant circuit; MMIC filter; UHF filters; active tuned circuit; compensation; controllable Q-factor; finite output conductance; high-order IF filters; inverting active integrator; low-microwave frequencies; microwave filter applications; noninverting active integrator; Active filters; Capacitors; FETs; Frequency; Gallium arsenide; MESFET circuits; Microwave filters; RLC circuits; Transconductance; Tuning;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.299739

Filename

299739