Title :
Monolithically integrated 1 × 12 array of planar InGaAs/InP photodiodes
Author :
Brown, Michael G. ; Hu, P.H. ; Kaplan, Daniel R. ; Ota, Yusuke ; Seabury, Charles W. ; Washington, M.A. ; Becker, E.E. ; Johnson, Julia G. ; Koza, M. ; Potopowicz, J.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
fDate :
3/1/1986 12:00:00 AM
Abstract :
We describe the fabrication and performance of monolithically integrated, 1 × 12 arrays of InGaAs/InP p-i-n photodiodes. These devices are completely optically and electrically interfaced for use in fiber-optic systems. For each element of the array, at -5 V, the dark current is <20 nA, and the total capacitance is <2.5 pF. The external coupling efficiency at 1.3 μm is >75 percent for every diode in the array. We have also measured the coupling capacitance between adjacent devices, and found it to be <0.1 pF.
Keywords :
Optical fiber receivers; Capacitance; Indium gallium arsenide; Indium phosphide; Optical arrays; Optical device fabrication; Optical devices; Optical fibers; PIN photodiodes; Photodetectors; Silicon compounds;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1986.1074707
