Title :
Electrical method for measuring emitter depth of shallow bipolar transistors
Author :
Post, I R C ; Ashburn, P.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
A simple electrical method of measuring the emitter depth of bipolar transistors is presented, and is validated by comparison with SIMS profiles. Good agreement is obtained with the SIMS technique for emitter depths of >1000 AA, but for shallower emitters the electrical method is shown to be more accurate.
Keywords :
bipolar transistors; semiconductor device models; semiconductor device testing; spatial variables measurement; 1000 AA; collector current modelling; electrical method; emitter depth measurement; shallow bipolar transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900020
