• DocumentCode
    1127177
  • Title

    New submicron MOSFET structural concept for suppression of hot carriers

  • Author

    Tasch, A.F. ; Shin, Hae-Young ; Maziar, C.M.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    26
  • Issue
    1
  • fYear
    1990
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped n-type region located behind a very shallow, steeply profiled source/drain junction.
  • Keywords
    hot carriers; insulated gate field effect transistors; hot carrier suppression; lightly doped n-type region; shallow source/drain junction; steeply profiled source/drain junction; structural concept; submicron MOSFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900026
  • Filename
    44862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127177