Proposed ultrahigh frequency microstrip utilising buried silicide groundplane

Recently it has become possible to produce buried single-crystal silicide layers in silicon on which epitaxial silicon may be grown. The authors show that if such a layer is used as a groundplane in a microstrip configuration, ultra-high-speed signals (e.g. 100 GHz) can be propagated with far less dispersion than on standard microstrip, by virtue of the close proximity of the groundplane to the centre conductor.