Total dose response of transconductance in MOSFETs at low temperature

Author

Pease, Ronald L. ; Clark, Steven D. ; Cole, Patrick L. ; Krieg, Jeffery F. ; Pickel, James C.

Author_Institution

RLP Res. Inc., Albuquerque, NM, USA

Volume

41

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

549

Lastpage

554

Abstract

n and p channel MOSFETs from four bulk CMOS technologies and two CMOS/SIMOX technologies were characterized for total dose response up to 1 Mrad(SiO₂) at temperatures from 10 K to 120 K. The peak transconductance in the linear region increased in n channel devices and decreased in p channel devices for devices with lightly doped drain (LDD) implants. These changes were much larger as the temperature was decreased and were as much as a factor of 50 in p MOSFETs at 10 K. The one technology without LDD showed only a minor change in and, with dose even at 10 K. The changes in transconductance are most likely a result of hole trapping in the spacer oxide affecting the series resistance

Keywords

CMOS integrated circuits; SIMOX; gamma-ray effects; hole traps; insulated gate field effect transistors; 1 Mrad; 10 to 120 K; CMOS; CMOS technologies; CMOS/SIMOX technologies; gamma irradiation; hole trapping; lightly doped drain implants; low temperature; n channel MOSFETs; oxide; p channel MOSFETs; series resistance; total dose response; transconductance; CMOS technology; Conductivity; Cranes; Degradation; Indium phosphide; MOSFETs; Space technology; Temperature; Transconductance; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.299797

Filename

299797