Title :
Application of test method 1019.4 to nonhardened power MOSFETs
Author :
Khosropour, P. ; Galloway, K.F. ; Zupac, D. ; Schrimpf, R.D. ; Calvel, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of nonhardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual ΔVT due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs
Keywords :
gamma-ray effects; insulated gate field effect transistors; military standards; power transistors; radiation hardening (electronics); semiconductor device testing; MIL-STD-883D Method 1019.4; low-dose-rate radiation response; nonhardened power MOSFET; threshold-voltage shift; Annealing; Application software; Bipolar transistors; Ionizing radiation; MOS devices; MOSFETs; Power engineering and energy; Power engineering computing; Temperature; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
