DocumentCode
1127473
Title
The effect of spurious intensity modulation in semiconductor diode lasers on the performance of optical heterodyne frequency shift-keyed communications systems
Author
Jeromin, L.L. ; Welford, D.
Author_Institution
Massachusetts Institute of Technology, Lexington, MA, USA
Volume
4
Issue
6
fYear
1986
fDate
6/1/1986 12:00:00 AM
Firstpage
590
Lastpage
595
Abstract
Analytical expressions are derived for the bit-error rate (BER) of an
-ary frequency shift-keyed (FSK), heterodyne, optical communication system with noncoherent demodulation in the presence of spurious intensity modulation (SIM) and frequency noise. The SIM degradation of an FSK system, implemented with semiconductor diode lasers, is estimated for lasers with zero and nonzero linewidths and will be discussed for a distributed feedback laser operating at 1.5μm and a channeled substrate planer laser operating at 0.83 μm. The SIM power penalty is typically less than 1 dB, but can exceed 1 dB for 2-, 4-, and 8-ary FSK at data rates above 1 Gbit/s.
-ary frequency shift-keyed (FSK), heterodyne, optical communication system with noncoherent demodulation in the presence of spurious intensity modulation (SIM) and frequency noise. The SIM degradation of an FSK system, implemented with semiconductor diode lasers, is estimated for lasers with zero and nonzero linewidths and will be discussed for a distributed feedback laser operating at 1.5μm and a channeled substrate planer laser operating at 0.83 μm. The SIM power penalty is typically less than 1 dB, but can exceed 1 dB for 2-, 4-, and 8-ary FSK at data rates above 1 Gbit/s.Keywords
Distributed feedback (DFB) lasers; Frequency-shift keying; Heterodyning; Optical modulation/demodulation; Optical transmitters; Semiconductor lasers; Distributed feedback devices; Frequency shift keying; Intensity modulation; Laser feedback; Laser noise; Optical mixing; Optical modulation; Optical noise; Semiconductor diodes; Semiconductor lasers;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1986.1074760
Filename
1074760
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