Heavy ion microscopy of single event upsets in CMOS SRAMs

Author

Metzger, S. ; Dreute, J. ; Heinrich, W. ; Rocher, H. ; Fischer, B.E. ; Harboe-Sørensen, R. ; Adams, L.

Author_Institution

Fachbereich Phys., Siegen Univ., Germany

Volume

41

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

589

Lastpage

592

Abstract

The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibility to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions, we can predict SEU cross-sections. For a MHS65162 2k x 8bit CMOS SRAM we found two regions per bit with different sensitivity and measured a total cross-section of (71±18) μm ² for a bitflip per cell and simulated 60 μm² with an argon beam of 1.4 MeV/nucl. (LET of 19.7 MeV/(mg/cm²))

Keywords

CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; ion microscopy; 16 kbit; 3-dimensional simulation; CMOS SRAMs; GSI heavy ion microprobe; MHS65162; SEU cross-sections; SEU imaging; charge collection; heavy ion irradiation; heavy ion microscopy; integrated circuit sensitivity; ion-induced malfunctions; single event upsets; static RAM; Argon; Clouds; Electron beams; Electron emission; Focusing; Ion beams; Microscopy; Random access memory; Single event transient; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.299804

Filename

299804