Title :
Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells
Author :
Gaillard, R. ; Poirault, G.
Author_Institution :
Nucletudes SA, Les Ulis, France
fDate :
6/1/1994 12:00:00 AM
Abstract :
2D numerical simulation of local dose deposition effects in N channel MOS transistors are presented in order to explain experimental observation of stuck bits in 4 T resistor loaded cells of high density SRAMs irradiated by heavy ions. The ion impact location in the channel is shown to strongly modulate the observed threshold voltage shift. This shift variation versus the inverse channel length is super linear, so more important effects are expected for 4T cells as transistor dimensions are reduced
Keywords :
MOS integrated circuits; SRAM chips; errors; ion beam effects; simulation; 2D numerical simulation; 4T resistor loaded cells; channel length; hard errors; heavy ion irradiation; high density SRAM cells; ion impact location; local dose deposition effects; n-channel MOS transistors; shift variation; static RAM; stuck bits; threshold voltage shift; Annealing; Data analysis; Leakage current; MOSFETs; Numerical simulation; Random access memory; Resistors; Testing; Threshold voltage; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
