An improved heterostructure-emitter bipolar transistor (HEBT)

Author

Liu, Wen-Chau ; Lour, Wen-Shiung

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Jung Univ., Tainan, Taiwan

Volume

12

Issue

9

fYear

1991

Firstpage

474

Lastpage

476

Abstract

An N-Al/sub 0.5/Ga/sub 0.5/As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The Al/sub 0.5/Ga/sub 0.5/As layer with higher valence-band offset Delta E/sub v/ offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with 12 a thin n-GaAs emitter layer.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; 80 mV; Al/sub 0.5/Ga/sub 0.5/As-GaAs; HEBT; MBE; common-emitter current gain; heterostructure-emitter bipolar transistor; knee-shaped characteristics; large-area devices; minority carrier confinement; n-GaAs emitter layer; offset voltage; reachthrough effect; valence-band offset; Bipolar transistors; Carrier confinement; Doping; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; P-n junctions; Student members; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116922

Filename

116922