Title :
Random Yield Prediction Based on a Stochastic Layout Sensitivity Model
Author :
Ghaida, Rani S. ; Doniger, Ken ; Zarkesh-Ha, Payman
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
Yield loss caused by random defects is an important manufacturability concern. Random yield of modern integrated circuits is associated with layout sensitivity to defects defined as the ratio of critical area to the overall layout area. This paper proposes a methodology to predict random yield with high fidelity based on a stochastic layout sensitivity model that uses very basic layout information. The model has very important applications including pre-layout yield prediction and yield forecasting for future process technologies.
Keywords :
design for manufacture; integrated circuit layout; integrated circuit manufacture; monolithic integrated circuits; prediction theory; stochastic processes; critical area analysis; design for manufacturability; integrated circuits; random defects; random yield prediction; stochastic layout sensitivity model; yield forecasting; Critical area analysis; defect density; design for manufacturability; layout sensitivity; random yield modeling and prediction;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2009.2024821