DocumentCode
1127608
Title
110-GHz monolithic resonant-tunneling-diode trigger circuit
Author
Özbay, E. ; Bloom, David M.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Volume
12
Issue
9
fYear
1991
Firstpage
480
Lastpage
482
Abstract
The design and fabrication of a novel resonant tunneling diode (RTD) structure to be used in a monolithically integrated trigger circuit are reported. The structure has been designed to have high peak current densities with relatively low resonant voltages. These devices have been monolithically integrated with resistors to build a high-frequency trigger circuit. Experiments demonstrated triggering performance up to 110 GHz with subpicosecond timing jitter.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; resonant tunnelling devices; trigger circuits; tunnel diodes; 110 GHz; AlAs-GaAs; GaAs; high peak current densities; high-frequency trigger circuit; low resonant voltages; monolithic resonant-tunneling-diode trigger circuit; subpicosecond timing jitter; Current density; Diodes; Fabrication; Frequency; Gallium arsenide; Resistors; Resonance; Resonant tunneling devices; Trigger circuits; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116924
Filename
116924
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