Impact of Energy Quantization on the Performance of Current-Biased SET Circuits

Author

Dan, Surya Shankar ; Mahapatra, Santanu

Author_Institution

Nano-Scale Device Res. Lab., Indian Inst. of Sci., Bangalore, India

Volume

56

Issue

8

fYear

2009

Firstpage

1562

Lastpage

1566

Abstract

The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.

Keywords

CMOS integrated circuits; Monte Carlo methods; single electron transistors; transistor circuits; Monte Carlo simulations; analytical modeling; current-biased single electron transistor circuits; energy quantization; hybrid CMOS SET circuits; negative differential resistance; neuron cell; Analytical models; CMOS technology; Circuits; Neurons; Performance analysis; Physics; Quantization; Semiconductor device modeling; Silicon; Single electron transistors; Voltage; Coulomb blockade; Monte Carlo technique; energy quantization; negative differential resistance (NDR); orthodox theory; single electron transistor (SET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2023954

Filename

5159397