A one-dimensional analytical model for the dual-gate-controlled thin-film SOI MOSFET

Author

Schubert, M. ; Höfflinger, Bernd ; Zingg, R.P.

Author_Institution

Inst. for Microelectron. Stuttgart, Germany

Volume

12

Issue

9

fYear

1991

Firstpage

489

Lastpage

491

Abstract

A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; accumulation; back-gate voltage; circuit simulation; dual-gate-controlled SOI MOSFETs; epitaxial lateral overgrowth; front-gate threshold voltage; one-dimensional analytical model; stacked p-channel MOSFET; strong inversion; subthreshold slopes; surface potentials; Analytical models; Circuit simulation; Integrated circuit technology; Large-scale systems; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116927

Filename

116927