A model for AC hot-carrier degradation in n-channel MOSFETs

Author

Mistry, Kaizad ; Doyle, Brian

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

Volume

12

Issue

9

fYear

1991

Firstpage

492

Lastpage

494

Abstract

A recently developed model for AC hot-carrier lifetimes is shown to be valid for typical and worst-case stress waveforms found in CMOS circuits. Three hot-carrier damage mechanisms are incorporated into the model: interface states created at low and medium gate voltages, oxide electron traps created at low gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under inverterlike AC stress. No transient effects are required to explain AC stress results, at least for frequencies up to 1 MKz.<>

Keywords

CMOS integrated circuits; carrier lifetime; electron traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; 10 kHz to 1 MHz; AC hot-carrier degradation; AC hot-carrier lifetimes; CMOS circuits; hot-carrier damage mechanisms; interface states; inverterlike AC stress; model; n-channel MOSFET; oxide electron traps; quasi-static contributions; Circuits; Degradation; Electron traps; Hot carriers; Interface states; Low voltage; MOSFETs; Medium voltage; Semiconductor device modeling; Stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116928

Filename

116928