Title :
MOSFET capacitance and conductance in the saturation regime
Author :
Glasser, Lance A.
Author_Institution :
Defense Adv. Projects Agency, Arlington, VA, USA
Abstract :
The relationship between capacitance and conductance of a MOSFET is examined in the region where velocity saturation dominates. In this domain it is shown that charge on the drain terminal (physically distinct from that in the channel) most be considered in order to keep the model from predicting the unphysical result that C/sub gd/ is negative. It is also shown that, under the same assumptions, g/sub m/>
Keywords :
capacitance; electric admittance; insulated gate field effect transistors; semiconductor device models; MOSFET; capacitance; conductance; drain terminal; gate capacitance; model; saturation regime; transconductance; transit time; velocity saturation; Capacitance; Charge measurement; Circuit simulation; Current measurement; Distributed parameter circuits; Immune system; MOSFET circuits; Predictive models; Transconductance; Transmission line theory;
Journal_Title :
Electron Device Letters, IEEE
