DocumentCode
1127659
Title
MOSFET capacitance and conductance in the saturation regime
Author
Glasser, Lance A.
Author_Institution
Defense Adv. Projects Agency, Arlington, VA, USA
Volume
12
Issue
9
fYear
1991
Firstpage
500
Lastpage
502
Abstract
The relationship between capacitance and conductance of a MOSFET is examined in the region where velocity saturation dominates. In this domain it is shown that charge on the drain terminal (physically distinct from that in the channel) most be considered in order to keep the model from predicting the unphysical result that C/sub gd/ is negative. It is also shown that, under the same assumptions, g/sub m/>
Keywords
capacitance; electric admittance; insulated gate field effect transistors; semiconductor device models; MOSFET; capacitance; conductance; drain terminal; gate capacitance; model; saturation regime; transconductance; transit time; velocity saturation; Capacitance; Charge measurement; Circuit simulation; Current measurement; Distributed parameter circuits; Immune system; MOSFET circuits; Predictive models; Transconductance; Transmission line theory;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116931
Filename
116931
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